Lattice dependent motion of voids during electromigration

Abstract

The influence of the crystal lattice configuration to electromigration processes, e.g., void formation and propagation, is investigated in suitable test structures. They are fabricated out of self-assembled, bi-crystalline Ag islands, grown epitaxially on a clean Si(111) surface. The μm-wide and approximately 100 nm thick Ag islands are a composition of a Ag(001) and a Ag(111) part. By focused ion beam milling, they are structured into wires with a single grain boundary, the orientation of which can be chosen arbitrarily. In-situ scanning electron microscopy (SEM) allows to capture an image sequence during electrical stressing and monitors the development of voids and hillocks in time. To visualize the position and motion of voids, we calculate void maps using a threshold algorithm. Most of the information from the SEM image sequence is compressed into one single image. Our present electromigration studies are based on in-situ SEM investigations for three different lattice configurations: Ag(001) (with electron current flow in [1¯1¯0] direction), Ag(111) (with electron current flow in [112¯] direction), and additionally 90∘ rotated Ag(111) (with electron current flow in [1¯10] direction). Our experimental results show that not only the formation and shape but also the motion direction of voids strongly depends on the crystal orientation.