Abstract
InAs quantum dots (QDs) on GaAs(100) grown by molecular-beam epitaxy were structurally characterized by ion channeling. Lattice deformation of the InAs QDs and diffusion of Ga atoms into InAs QDs were clearly observed to depend strongly on the InAs coverage. It was revealed that the diffusion is significantly enhanced when the InAs coverage is changed from 1.53 to 1.71 monolayer. During this change, lattice deformation was reduced while the average size (base diameter) of dots was decreased. These phenomena suggest that some growth process change occurred.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
