Abstract
Photoelectric and oxygen adsorption properties of initially clean germanium surfaces were studied in an ultrahigh vacuum system. Photoelectric yield increases at higher photon energies were observed for surfaces which contained strains or defects. The effects of oxygen adsorption on the photoelectric yield and threshold were much smaller for ion bombardment damaged surfaces than for annealed ones. The effects of oxygen adsorption on evaporated germanium films atop the germanium crystal substrate were determined mainly by the surface condition of the substrate. When germanium was evaporated onto the clean germanium crystal substrate at room temperature, there was evidence of epitaxial growth for thickness equivalent to ten atomic layers.
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