Abstract
We have measured the effects of submonolayer oxygen adsorption on laser-induced Ga 0 and Ga + emission from GaP(110) surfaces. It is found that oxygen adsorption enhances that component of the Ga 0 emission yield which decays rapidly as irradiation is repeated, but not the Ga + emission yield. The results are interpreted in terms of bond weakening due to the interaction of surface defects with adsorbed oxygen.
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