Abstract
In-situ measurements of resistivity during annealing cycles have been made on a-Ge films with thicknesses from 500Å to 6000Å. Dynamics of annealing depends strongly on film thickness, which may be partly associated with the anisotropy of conductivity. Ambient oxygen adsorbed on the film surface seems to have no significant influence on annealing kinetics of defects. Elimination of oxygen adsorption causes the low temperature crystallization near 250°C. This is explained in terms of the stabilization of the surface structure by adsorbed oxygen. It is found that progressive decrease of resistivity at the crystallazation temperature is expressed by the exponential function of the annealing time.
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