Abstract
Potassium tantalite (KTaO[Formula: see text] has shown an excellent performance in optoelectronic applications, proving its advantages with respect to fabricating single crystal thin films by ion implantation. This work introduces the damage formation of KTaO3 under 200 keV He ion implantation at room temperature and He bubbles accumulation. Ion implantation-induced lattice damage before and after annealing was quantitatively analyzed by using the Rutherford backscattering spectrometry in channeling technique. The crystals phase analysis of the samples under different fluences was studied by using the X-ray diffraction technique. For 200 keV He ions, the accumulation and migration of He bubbles were induced by the thermal annealing effect under high fluences of He[Formula: see text]. The He bubbles appear obviously coarsening and embrittlement with thermal annealing. The blistering phenomenon caused by He ion implantation is the physical basis for the smart-cut technique, which allows the preparation of high-quality single-crystal films.
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