Abstract
The spectra of InGaN multi-quantum-well (MQW)-structure laser diodes (LDs) show several peaks with peak separations (1–5 meV) different than can be explained by the longitudinal mode spacing. It was proposed that these subband emissions resulted from transitions between quantum dot-like subband energy levels [336]. Recombination of localized excitons has been proposed as an emission mechanism for the spontaneous emission of InGaN quantum-well-structure LEDs and LD. Also, the radiative recombination of the InGaN MQW LEDs and LDs was attributed to excitons (or carriers) localized in deep traps (100–250 meV) which originated from the In-rich region in the InGaN wells acting as quantum dots [348]. Recently, RT continuous-wave (CW) operation of the InGaN MQW LDs with a lifetime of 27–35 h has been achieved [349, 350]. It is of interest to measure the characteristics of these RT CW LDs in detail, especially the emission mechanism, with respect to the self-formation of InGaN quantum dots [336, 348]. Here, we describe the characteristics of InGaN MQW LDs under RT CW operation.
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