Abstract
We demonstrate that micromachining lattice-matched InGaAs quantum wells grown on (001) InP with strained barriers produces precise laterally patterned modifications to the semiconductor band structure. The light-hole and heavy-hole excitonic transitions are mixed and differentially shifted by the micromachining, inducing a surface-normal optical anisotropy characterized by a peak birefringence of Δn=0.028. The measured optical properties agree with calculations based on finite-element models of the strain combined with an eight-band k⋅p model that includes deformation potentials. This technique may find applications in fields such as surface-normal polarization modulators, quasi-phase matching, and optically-acitve piezoelectric materials.
Published Version
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