Abstract
A laterally diffused metal oxide semiconductor (LDMOS) device enables the realization of a wide range of application voltages by varying impurity concentration and the length of the lightly doped drain contact region. However, this resistive contact region causes the abnormal characteristics observed in capacitances. Here, the HiSIM-LDMOS model based on a complete surface-potential description is demonstrated, which simulates the features of the LDMOS device consistently. With this model, an optimization scheme for the LDMOS device for requested features is discussed.
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