Laterally coupled distributed feedback cascade diode lasers emitting near 2.9 µm

Abstract

Cascade type-I quantum well GaSb-based laterally coupled distributed feedback diode lasers emitting near 2.9 µm were designed and fabricated. Second order index grating with period of 825 nm was defined by e-beam lithography and etched on both sides of 4-µm-wide shallow ridge waveguide. Anti-/neutral reflection coated 2-mm-long devices that were solder-mounted epitaxial side-up demonstrated stable single frequency operation in a wide temperature range with output power of 13 mW at 20°C. Bragg wavelength temperature tuning rate was ∼0.32 nm/K.