Abstract
We describe the ongoing development of an ultra-low energy (ULE) ion implantation system for the implementation of a laterally controlled ion incorporation into 2D materials like graphene or transition metal dichalcogenides (TMDs). For this purpose, we use ion optics simulations to demonstrate how the generation of an electrostatic potential gradient laterally along the sample surface can be used to control the size of the implanted sample area. The simulations are complemented by experiments on the incorporation of 25eV Mn ions into thin tetrahedral amorphous carbon (ta-C) films on Si substrates. With the help of RBS measurements, it is shown how potential gradients of different strengths influence the amount of introduced Mn.
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Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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