Abstract
We have developed a fabrication process for a laterally configured resistive switching device based on a Gd oxide. A nano-gap electrode connected by a Gd oxide with the ideal interfaces has been created by adapting the electro-migration method in a metal/GdOx bilayer system. Bipolar set and reset operations have been clearly observed in the Pt/GdOx system similarly in the vertical device based on GdOx. Interestingly, we were able to observe a clear bipolar switching also in a ferromagnetic CoFeB nano-gap electrode with better stability compared to the Pt/GdOx device. The superior performance of the CoFeB/GdOx device implies the importance of the spin on the resistive switching.
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