Abstract
In the last few years, the emergence of studies concerning the resistive switching (RS) phenomenon has resulted in the finding of a large amount of materials being capable of acting as an active layer in such devices, i.e., the layer where the change in resistance takes place. Whereas the normal operation consists of the electrical readout of the modified resistance state of the device after electrical writing, electro-photonic approaches seek the involvement of light in these devices, be it either for the active Set or Reset operations or the readout. We propose in this work silicon nanocrystal multilayers (Si NC MLs) as an active material for being used in RS devices, taking advantage of their outstanding optical properties. The resistance states of Si NC MLs were obtained by electrical excitation, whose readout is carried out by electrical and electro-optical means, thanks to a distinguishable electroluminescence emission under each state. To achieve this, we report on an adequate design that combines both the Si NC MLs with ZnO as a transparent conductive oxide, whose material properties ensure the device RS performance while allowing the electro-optical characterization. Overall, such an occurrence states the demonstration of a Si NCs-based electroluminescent RS device, which paves the way for their future integration into photonic integrated circuits.
Highlights
Within scitation.org/journal/jap this context, previous works have been led by the group of Kenyon by employing a TiN/Si-rich oxide (SiOx)/TiN structure devoted to understanding the role of the dielectric/electrode interfaces in the conductive filament (CF) formation and destruction processes,9,10 and to demonstrate that the presence of Si nanoinclusions might as well contribute to the switching operation of the dielectric layer
Up to this point we have shown how our ZnO/Si NCs-based resistive switching (RS) device structures are capable of giving a distinguishable EL emission in different resistance states when employing reading conditions that have been stablished for 6 V, i.e., not forcing the device to a point where an undesired Set or Reset takes place, while keeping strong EL emission
It has been observed that the EL emitted at each resistance state (HRS and low resistance state (LRS)) exhibits a distinguishable light emission after electrical excitation under both regimes
Summary
The resistive switching (RS) phenomenon had been known for many years, it was in 2008 when the first fully operational RS device was realized. Materials presenting the RS phenomenon, typically dielectrics, exhibit inner structural modification after an electric field is applied through the two sandwiching electrodes, resulting in controlled changes in resistivity under certain electrical polarities. This novel property allows dielectric materials to act, when embedded in the proper device structure, as resistive random-access memory (RRAM) devices that operate between at least two well-defined states, performing as digital memories. the occurrence of RS between two well-defined resistance states is widely accepted to be caused by the formation of a conductive filament (CF) across the dielectric material which, according to the most established models, takes place via either the atomic diffusion from the metallic electrodes toward the dielectric (electrochemical metallization, ECM) or the generation of oxygen vacancies due to oxygen atom diffusion from the oxide-based dielectric toward the electrodes (valence change mechanism, VCM). The cyclic generation and destruction of the CF has been investigated in a wealth of dielectric and semiconductor materials, aiming at the full understanding of the fundamental properties of the RS phenomenon and at the determination of the optimum conditions for long-lasting performance (that is, improved properties of a RRAM device).7,8Heterogeneous materials such as Si suboxides are of high interest, since they are compatible with current electronic technologies. Materials presenting the RS phenomenon, typically dielectrics, exhibit inner structural modification after an electric field is applied through the two sandwiching electrodes, resulting in controlled changes in resistivity under certain electrical polarities.. Materials presenting the RS phenomenon, typically dielectrics, exhibit inner structural modification after an electric field is applied through the two sandwiching electrodes, resulting in controlled changes in resistivity under certain electrical polarities.2 This novel property allows dielectric materials to act, when embedded in the proper device structure, as resistive random-access memory (RRAM) devices that operate between at least two well-defined states, performing as digital memories.. Within scitation.org/journal/jap this context, previous works have been led by the group of Kenyon by employing a TiN/SiOx/TiN structure devoted to understanding the role of the dielectric/electrode interfaces in the CF formation and destruction processes, and to demonstrate that the presence of Si nanoinclusions might as well contribute to the switching operation of the dielectric layer.
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
