Abstract
In this work, we report a lateral thin-film Schottky (LTFS) rectifier on a highly doped SOI epitaxial layer. Based on two-dimensional (2-D) numerical simulations, we demonstrate for the first time that, for an epitaxial doping of 10/sup 17/ cm/sup -3/, breakdown voltages as large as 60 V (about six times higher than the plane parallel breakdown voltage) can be achieved using the proposed structure with very low reverse leakage current. Further, the forward voltage drop of the proposed device is shown to be as low as 0.27 V even at a current density 100 A/cm/sup 2/. The reasons for improved performance of the LTFS rectifier are analyzed and the effects of film thickness, Schottky barrier height, and the Si-SiO/sub 2/ interface states on the device performance are also reported.
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