Abstract
High-current turn-on and turn-off transients for submicrometer bipolar transistors were studied in detail using two-dimensional numerical computer simulation. It is shown that, when the emitter line width is scaled down from 0.4 to 0.1 mu m, only a little improvement is achieved in the turn-on transient, while the time delay is drastically reduced in the turn-off transient. This is due to the difference between the charge and discharge process for excess holes stored in the peripheral region of the base and the emitter. Emitter current oscillation was observed in the turn-off transient, which is attributed to the complicated change in the discharge path. >
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
