Abstract
We have grown laterally overgrown diamond films on stripe patterned silicon substrates by microwave plasma chemical vapor deposition. Titanium was used as the mask material and stripe patterns were fabricated using conventional photolithographic method. The selective growth area and the metal mask part order to enhance the crystal nucleation was performed before photolithographic process. SEM observation revealed that the diamond film was laterally overgrown on titanium mask. The result width of diamond film was 16 μm. The grain size on mask region was about three times as large as that g rown on nucleation region.
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