Abstract
AbstractAn increase in the demand for artificial intelligence is leading to advanced research in the field of neuromorphic systems, which imitate human brain functions with the hope of increasing computational speed and lowering power consumption. Especially, the development of energy‐efficient and reliable synaptic devices is critical as synapses are fundamental building blocks of neuromorphic systems. In this study, by adjusting the charge injection pathway of conventional flash memory devices, a lateral migration‐based synaptic device is proposed. Using the efficient program/erase method, the proposed device is operable at a significantly low voltage while maintaining formidable retention and endurance characteristics. Furthermore, an efficient hybrid off‐chip/on‐chip training method using the proposed device is presented. The results demonstrate a variation‐robust neuromorphic system, indicating the superiority of the proposed device.
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