Abstract
The authors report the fabrication of lateral metallic structures with multiple materials using specifically designed resist masks and multiangle shadow evaporation. The whole fabrication process is carried out without breaking vacuum, which avoids contamination and allows for highly controlled interface properties between metals deposited sequentially. The authors incorporate the thickness of the mask as a design parameter, which allows one to introduce controlled variations between multiple contacts in the same device. Using a suspended mask, it is demonstrated the fabrication of asymmetric single electron transistors with tunnel junctions with different resistances. Using a nonsuspended mask, it is illustrated the fabrication of an extended structure (a thermopile), which consists of tenths of ferromagnetic wires with a nominal width of 30 nm connected electrically in series using a nonmagnetic metal.
Highlights
The development of novel devices in recent years has been closely related to new methods and techniques to fabricate them
We describe in detail the implementation of multiangle evaporation methods that incorporate the height of the top resist as a variable for mask design
We described in detail the implementation of multiangle evaporation methods that incorporate the height of the top resist as a variable for mask design, which allowed us to introduce controlled variations between multiple contacts in the same device and to fabricate complex structures, while avoiding contamination
Summary
The development of novel (metallic) devices in recent years has been closely related to new methods and techniques to fabricate them. Submicron metal/AlOx/ metal tunnel junctions have multiple applications but the fabrication of reproducible junctions and a detailed study of their stability can only be carried out in a controlled way by minimizing contamination This can be achieved using in situ bilayer double angle evaporation methods.. There, a suspended mask is defined to fabricate the device by sequentially evaporating the materials involved from different angles without breaking vacuum in the whole process (Fig. 1) In this way, one can create very clean interfaces or well-controlled tunnel junctions. Standard in situ methods using a resist bilayer and a double-angle evaporation technique have enabled significant progress in sample fabrication and are an established technique in mesoscopic physics They are restricted to only two materials and to interfaces with nominally the same properties, even in a device with multiple contacts. We present the transport characteristics of the final devices, which show a high level of control of the interfaces.
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