Abstract
This paper demonstrates ion implanted lateral GaN MISFETs using double ion implantation technology, which enables us to form Si ion implanted source/drain regions in Mg ion implanted p-well fabricated on free-standing GaN substrates. Maximum drain current of 39 mA/mm and maximum transconductance of 4.5 mS/mm for GaN MISFET with a gate length of 2 μm at an estimated Mg surface concentration of 2.2 × 1018 cm-3 were obtained. A threshold voltage was-0.5 V for the device. These results show that we successfully formed Si ion implanted n-type regions in the Mg ion-implanted layer and achieved innovative performance.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
