High threshold voltage normally‐off GaN MISFETs using self‐alignment technique

Abstract

AbstractWe demonstrate high threshold voltage GaN MISFETs made by utilizing self‐alignment process using ion implantation and precisely controlled silicidation gate technologies. The self‐aligned structures enable us to reduce source and drain parasitic resistance, which expect to improve in device characteristics. To form shallow source and drain junctions which suppress the short channel effects, we selected the very low implantation energy of 30keV. We propose self‐aligned GaN MISFETs with Idss of 30 mA/mm, gmmax of 3 mS/mm and threshold voltage of +3.4 V. The high threshold voltage shows the potential and advantages of GaN MISFETs for high voltage operations. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)