Abstract
Lateral β-Ga2O3 Schottky barrier diodes (SBDs) each are fabricated on an unintentionally doped (-201) n-type β-Ga2O3 single crystal substrate by designing L-shaped electrodes. By introducing sidewall electrodes on both sides of the conductive channel, the SBD demonstrates a high current density of 223 mA/mm and low specific on-resistance of 4.7 mΩ⋅cm2. Temperature-dependent performance is studied and the Schottky barrier height is extracted to be in a range between 1.3 eV and 1.35 eV at temperatures ranging from 20 °C to 150 °C. These results suggest that the lateral β-Ga2O3 SBD has a tremendous potential for future power electronic applications.
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