Abstract
AbstractThe lateral motion of iron impurities was observed and studied in ptype iron contaminated silicon. The lateral diffusion was induced by and then measured using Schottky diodes with a special interdigitated fingers design. Capture of the impurities was done by diffusing to laterally placed dislocation loops formed by a self aligned ion implantation. Lateral changes in Fe concentration were determined using capacitance-voltage and deep level transient spectroscopy.
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