Abstract
We report experimental results on photoluminescence and excitation of photoluminescence of GaAs/Ga0.7Al0.3As quantum wells (19, 38.5 and 77 A) grown on nominal and vicinal GaAs substrates. In order to study the influence of the interface microscopic structure on the optical properties of the studied quantum wells, we perform luminescence experiments at low temperature by exciting selectively a small area of a few μm2. In this way the presence of isolated islands on the interface is evidenced by a fine structure in the photoluminescence and photoluminescence excitation spectra. The difference in localization length of excitons in samples with steps along the [110] and the [110] directions is emphasized.
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