Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer

Abstract

This article is concerned with investigation of n-GaP/p-Si heterostructure for using in solar cells. We examine the contribution of the inversion layer to lateral transport for (n)GaP wide gap emitter. We evaluate the carrier density in the inversion layer by varying the temperature and the doping level of the emitter. Simulations predict a formation of the inversion layer in p-Si close to the interface with a thickness being in the range of 10 - 20 nm and electron concentration, which is strongly depends on doping level and temperature. It is shown that the temperature dependence of surface conductivity n-GaP/p-Si is linear and could be related to dependence of electron concentration in the inversion layer.