Abstract
In modern fast bipolar transistor design, high frequency performance and current operating level are traded off with breakdown voltages. Charge sharing between extrinsic and intrinsic base acceptors reduces the maximum electric field in the intrinsic transistor and improves BV/sub CEO/. Extrinsic base can be optimized and higher breakdown voltage can be obtained without severely degrading high frequency performance. This was shown by the simulation of the horizontal current bipolar transistor electrical characteristics.
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