Abstract
The structural and optical properties of vertically coupled In0.5Ga0.5As quantum dots (QDs) in a GaAs matrix with a large number of QD stacks has been studied. We show that for large numbers of QD deposition cycles (N), in addition to vertical coupling, lateral coupling effects between the laterally neighboring QDs influence the electronic spectrum of the structure. Lateral coupling of vertically-coupled QDs or even geometrical merging of QDs in the upper rows result in an appearance of a new photoluminescence (PL) line associated with a radiative recombination of excitons via the states of laterally coupled QDs, which dominates the PL spectrum for large N.
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