Abstract
We describe the growth, material characterization, and lasing of InP/GaInP quantum dot (QD) microdisks (diameter D = 2.2 μm, quality factor Q∼9000) with an emission lasing line of 693 nm (77 K). We demonstrate that MOVPE growth can result in two types of InP/GaInP QDs, differing in height (type A h∼5–10 nm, type B h∼20 nm), whose emission has different decay lifetimes (τA=0.6 ns, τB=2.4 ns). We show, importantly for technological microlasing applications, that lasing occurs via the excited states of type A QDs, as inferred from a number of experimental results: power-dependent photoluminescence, time-resolved experiments, and temperature dependence of the generation threshold.
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