Lasing properties of AlGaAs/GaAs material diode lasers grown by MOCVD using TBA in N 2 ambient

Abstract

In Metal-organic chemical deposition (MOCVD) growth of AlGaAs/GaAs heterostructure materials, AsH 3 is normally used as the group V precursor and H 2 is used as the carrier gas, which is very toxic and safety harzad. In this contribution, we will present the recent result of AlGaAs/GaAs material diode lasers grown by MOCVD using TBA as the group-V source and N 2 as the carrier gas. In the growths, TMGa and TMAl were used as group-III sources, DEZn and silane were used as p-type and n-type dopants. A single quantum well (SQW) laser structure was adopted to characterize the quality of the materials grown. Broad-area stripe lasers with the stripe width of 150 μm and different cavity lengths have been prepared. Lasing of the prepared devices has been successfully achieved with a low threshold current density of 506 A/cm 2. Devices with different cavity lengths (1200/1000/800 μm) were cleaved and tested to obtain the internal loss α i and internal quantum efficiency η i of the grown laser structure grown. An internal loss α i of 9.7 cm −1 and internal quantum efficiency η i of 81% were received. This is the first report so far for MOCVD growth of AlGaAs/GaAs diode laser materials using TBA as the group-V source and N 2 as the carrier gas.