Abstract
Edge-emitting InGaAs/GaAs laser diodes were grown on patterned GaAs (311)A-oriented substrates. Due to the amphoteric properties of Si as a dopant in high-index GaAs, a device with a lateral p–n junction was obtained. CW lasing was observed up to 200 K. The dependence of the threshold current with temperature was measured. The characteristic temperatures were T0=180 and T0=57 K for experimental temperatures below and above 100 K, respectively, meaning that the carrier confinement structure must be improved. Quantitative results of the cavity gain were experimentally obtained.
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