Abstract
We present an overview of our theoretical and experimental work on a novel type of semiconductor lasers - quantum well (QW) lasers with asymmetric barrier layers (ABLs). Our experimental work supports our theoretical derivations — ABL QW lasers demonstrate superior operating characteristics as compared to conventional QW lasers. In particular, the threshold current is lower and more temperature-stable, the light-current characteristic is more linear, and the wall-plug efficiency is higher in ABL lasers.
Highlights
Low lasing threshold, as well as temperature-stable and high-power operation, have always been desirable in semiconductor lasers [1]–[13]
This fraction is consumed by spontaneous recombination in the waveguide region [optical confinement layer (OCL)], wherein the carriers are initially injected from the cladding layers and which contains the active region [Figure 1(a)]
To overcome the limitations placed on the operating characteristics by recombination outside the active region, novel designs of semiconductor lasers were proposed – one using double tunnellinginjection into the active region [14]–[22] and the other using asymmetric barrier layers (ABLs) [15]–[17] [one on each side of the active region – see Figure 1(b, c)]
Summary
As well as temperature-stable and high-power operation, have always been desirable in semiconductor lasers [1]–[13]. The parasitic electron-hole recombination outside a low-dimensional active region presents a major challenge in conventional injection lasers. Due to this recombination, the laser characteristics are adversely affected – the threshold current is increased and more temperaturesensitive and the light-current characteristic (LCC) is sublinear, even in the absence of heating effects. To overcome the limitations placed on the operating characteristics by recombination outside the active region, novel designs of semiconductor lasers were proposed – one using double tunnellinginjection (injection of both electrons and holes) into the active region [14]–[22] and the other using asymmetric barrier layers (ABLs) [15]–[17] [one on each side of the active region – see Figure 1(b, c)].
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