Abstract
Chemical vapor deposition (CVD) of diamond film has recently been discovered in variety of flame and plasma environments. A gas jet of effluent from a dc-arc plasma has one of the fastest growth rates for high quality diamond film. To improve the yield from such arc-jet plasmas, models of the deposition chemistry and sensors to control the reactive gas jets are needed. Measurements of the gas temperature in the jet and boundary layer above the substrate surface are crucial to develop models of the process chemistry. Laser-induced fluorescence (LIF) measurements of the rotational distribution of diatomic radicals has proven an effective method for non-intrusive determinations of gas temperature in low-pressure flames.1 In this presentation we discuss LIF observations of CH radicals in a dc-arc-jet reactor during diamond CVD and explore different excitation and detection strategies to determine the optimum method for temperature measurements.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
