Abstract
The effect of a small amount of O 2 addition on film quality and hydrogen incorporation in chemical vapour deposition (CVD) diamond films was investigated and the films were grown using a 5-kW microwave plasma CVD reactor. Film quality and bonded hydrogen were characterized using micro-Raman and Fourier transform infrared (FTIR) spectroscopy, respectively. It was found that in general for films grown using CH 4/H 2 plasma both without and with O 2 addition, the hydrogen incorporation increases with increasing substrate temperature, while a small amount of O 2 addition (O 2/CH 4=0.1) into CH 4/H 2 (4%) plasma strongly suppresses the incorporation of hydrogen into the film. Raman spectra show that the added oxygen improved film quality by etching and suppressing the amorphous carbon component formed in the film. The above effect of oxygen addition on hydrogen incorporation and film quality is discussed according to the growth mechanism of CVD diamond. The CVD diamond specific hydrogen related IR vibration at 2828 cm −1 appears as a sharp and strong peak only in the FTIR spectra of poor quality films grown at high temperature both without and with O 2 addition, but it appears much stronger in the film grown without O 2 addition. This result experimentally excludes the assignment of the 2828 cm −1 peak arises from hydrogen bonded to oxygen related defect in the literature.
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