Laser-induced chemical vapor deposition of aluminum from trimethylaluminum: wavelength and temperature dependence

Abstract

Aluminum films were produced by laser-induced chemical vapor deposition (LICVD) from trimethylaluminum (TMA) using KrF (248 nm) and ArF (193 nm) excimer lasers. Film growth was measured at substrate temperatures between 20 and 150°C. It is demonstrated that the deposition rate is governed by the mole fraction of gas phase TMA monomer in the region near the heated susceptor. At 248 nm, growth from the monomer was more than seven times as efficient as that from the dimer. LICVD from monomeric TMA at 248 nm was 3.5 times more efficient than at 193 nm. These experimental results suggest an improved LICVD method for aluminum deposition and deposition of aluminum containing materials such as GaAlAs.