Abstract
Growth rate enhancement of GaAs films is studied using tri-isobutyl gallium (TIBGa) and triethylgallium (TEGa) by Ar+ laser-assisted metalorganic molecular beam epitaxy (MOMBE). TIBGa grows GaAs films at substrate temperatures approximately 50°C lower than does TEGa. The laser power required to enhance the growth rate for TIBGa is two-thirds that for TEGa. The carbon concentration of a film grown with TIBGa is one-tenth that of one grown with TEGa. Thus, the use of TIBGa has two advantages over TEGa: less laser power required to enhance growth rate, and less carbon in the film.
Published Version
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