Abstract
We have investigated the use of tri-isobutylgallium (TIBG) and tri-isopropylgallium (TIPG) for growth of InGaP on GaAs by metalorganic molecular beam epitaxy. In particular, we have explored the effect of growth temperature on carbon background and lattice constant. The incorporation rate of carbon was found to decrease with increasing temperature while that for Ga was found to increase. Both trends suggest enhanced alkyl-Ga decomposition with increased temperature similar to that observed for growth with triethylgallium (TEG). The variation in composition with growth temperature was, however, reduced for TIBG and TIPG relative to previous reports using TEG. Measured lattice constant varied linearly with TMI flow up to a value of ∼5.675 Å. The band gap was found to vary discontinuously with lattice constant suggesting enhanced ordering in Ga-rich layers. Finally, Sn doping from tetraethyltin was shown to vary linearly with TESn flux provided the combination of low V/III ratios and Ga-rich compositions was avoided.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
