Abstract
We demonstrate the possibility of post-fabrication trimming of the response of nitrogen-rich silicon nitride racetrack resonators by using an ultraviolet laser. The results revealed the possibility to efficiently tune the operating wavelength of fabricated racetrack resonators to any point within the full free spectral range. This process is much faster than similar, previously presented methods (in the order of seconds, compared to hours). This technique can also be applied to accurately trim the optical performance of any other silicon photonic device based on nitrogen-rich silicon nitride.
Highlights
The short-wave infrared spectral region has emerged as a promising candidate for the realisation of next-generation communication systems and sensors [1]
Such systems are compatible with silicon photonics technology, as the material loss of silicon dioxide is low at 2 μm [4, 5]
It is possible to derive the minimum length that needs to be exposed in order to cover a full free spectral range (FSR) of 6.15 nm, which, in this case, is around 106 μm
Summary
The short-wave infrared spectral region (around 2 μm wavelength) has emerged as a promising candidate for the realisation of next-generation communication systems and sensors [1]. The extensive research in this area is driven by the fact that the hollow-core photonic bandgap optical fibres have low loss (0.1 dB/km) in the 1900 nm-2100 nm wavelength range (which is approximately 0.4 dB/km lower than the loss of conventional single-mode optical fibres) [2], while the optical gain window of thulium doped fibre amplifiers resides at around 1910 nm-2020 nm [3]. Such systems are compatible with silicon photonics technology, as the material loss of silicon dioxide is low at 2 μm [4, 5]. To SOI, the silicon nitride platform, with silicon dioxide cladding, has negligible material absorption in the near- and mid-infrared spectral ranges up to the wavelength of 3.7 μm, where optical losses increase due to high material absorption in silicon-dioxide [10]
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