Laser surface cleaning of organic contaminants

Abstract

Laser surface cleaning process has been a useful and efficient technique for various industrial applications. The removal of photoresist contaminants on silicon wafers was investigated with a krypton fluoride (KrF) excimer laser, and the irradiated area was characterized using a profilometer, a scanning electronic microscopy (SEM), an Auger electron spectroscopy (AES) and a Fourier transition infrared spectroscopy (FT-IR). It was found that there exist an optimal number of pulses to remove the contaminant from the substrate surface without any laser-induced damage, depending on the laser density on the surface. A model to predict the optimal number of pulses, which agrees well with Beer–Lambert's law, is proposed and proved to be operable.