Abstract
In this letter, a novel method for the fabrication of high-quality facets for III-nitride lasers grown on c -plane sapphire substrates as well as on GaN substrates is presented. Based on a laser scribing process gain-guided laser diodes with smooth facets were fabricated, which showed threshold current densities of 6.5 kA/cm2 at an emission wavelength of 405 nm under pulsed operation.
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