Abstract
The increasing needs in polycrystalline silicon films which are suitable for fabrication of the low-cost microelectronic sensors stimulate studies aimed to improve the properties of polysilicon. A possible way to obtain the high-quality poly-Si layers is the microzone laser recrystallization (MLR) technique. The aim of the studies was to obtain the material with improved characteristics for fabrication of piezoresistive mechanical sensors. The microzone laser recrystallization of a polysilicon layer using the heating of a substrate represents an easily realized technology of SOI structures for their further application in fabrication of IC and microelectronic sensors [1,2]. The microzone laser recrystallization changes the micro structure of poly-Si layers modifying their electrical and piezoresistive properties. The main these properties, being the most important in the mechanical sensors technology, are studied.
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