Abstract
The results of studies concerning the creation of microelectronic mechanical and thermal sensors based on silicon-on-insulator structures (SOI-structures) with laser recrystallized polysilicon layers are presented. The developed technology of microzone laser recrystallization of polySi layers is described. On the basis of investigated thermoresistive characteristics of poly-Si layers with different carrier concentrations microelectronic temperature sensors for different temperature ranges were developed, including sensors of cryogenic temperatures operating at high magnetic fields. The piezoresistive properties of poly –Si layers with different carrier concentration are studied in the wide temperature and strain ranges. The developed microelectronic piezoresistive pressure sensors for different applications are presented, i.e. high-frequence sensors for aerodynamic studies, medical pressure sensors and sensors to measure pressure and temperature. The created microelectronic capacitive sensor for arterial pressure measurement is described also.
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