Abstract
Laser radiation of semiconductor targets of solid solutions excited by an electron beam in a gas-filled diode was investigated at constant and varying gas pressures. In the first case, lasing was excited by an electron beam with an energy of and a duration of in semiconductor targets with different . The highest powers 125 and were achieved at and , respectively. The minimum power was observed in the yellow-green spectral region. The maximum slope efficiency in these experiments reached 9 %. In the second case, the radiation power of CdS targets was studied as a function of the air pressure in the gas diode varying from 0.1 to . The experimental data well agree with the calculation results. The possibility of reducing the radiation divergence by using a conical optical fibre is demonstrated. At the lasing threshold of semiconductor targets exited by an electron beam or a streamer discharge, filamentary channels appear due to, probably, an anisotropy of the impact ionisation coefficient.
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