Abstract
This paper is concerned with laser projection patterned processing of material. We first describe the technique and discuss its limitations and its prospects for utilization in the fabrication of a complete IC. Then, experimental results on laser projection patterned etching of GaAs in a chlorine atmosphere performed with an KrF excimer laser and deep UV optics are reported. The dependence of etch rate, surface quality and spatial resolution on the various etching parameters are discussed. The overall etching process is thermally driven and not concerned with photochemical reactions.
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