Abstract
Lead titano-zirconate ferroelectric thin films have developed a great interest for their applications in memory devices, and more recently in microelectromechanical systems because of their interesting piezoelectric properties. The patterning has become an essential element for PZT integration in devices. Reactive ion beam etching of sputtered PZT(54/46) thin films has been performed using Ar/CHF 3 gas. The dependence of etch rate and selectivity with the etching parameters has been investigated. PZT etch rate and selectivity reaches 900 Å/min and 7.5 respectively. We have evaluated the PZT surface damage by contact mode AFM. It appears that the roughness increases after ion bombardment. We have observed electrical damaged. These degradations are underlined by carrying out C(V) and hysteresis loops before and after etching.
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