Abstract
A proposed method for laser processing of transparent semiconductor materials is based on thermal effect of increasing an absorption of light with a wavelength in the range of fundamental absorption-edge spectrum of the material. In this paper, we provide an analytical and experimental investigation of increase of absorption in semiconductor materials caused by laser radiation with wavelength in the range of absorption-edge of the material.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
