Abstract
Residual stress is a key feature which has to be taken into account in all steps of fabrication and processing of semiconductor materials and devices. The photo-elastic microscope SIREX (Scanning Infrared Stress Explorer) measures the depolarization of the light of an infrared laser probe caused by stress-induced birefringence in the sample. Subsequently, a map visualizes the in-plane optical anisotropy induced by stress. Hence, the system is applied as non-destructive tool to map stress distributions with high lateral resolution (3µm) and highest possible stress sensitivity (0.1 kPa). The so-called multi-polarization analysis results in maps of the in-plane maximum shear stress magnitude Δσ and the direction of the principal stress components. These maps can reveal the local stress fields of buried defects and their alignment in distinctive crystallographic directions. The fields are usually at least one order of magnitude larger in extension than the related defects themselves. Examples of extended defect structures in different crystalline semiconductor materials are presented in this paper. The emphasis has been put on line-shaped structures such as slip lines and twins which are partly accompanied by either tensile or compressive point-like stress sources. These structures are showing model characteristics for developing formal procedures of data and image processing under industrial conditions.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.