Abstract
We report results of laser processing of amorphous silicon and silicon-germanium semiconductor materials for the production of integrated photonic platforms. As the materials are deposited and processed at low temperatures, they are flexible, low cost, and suitable for multi-layer integration with other photonic or electronic layers. We demonstrate the formation of waveguides via crystallization of pre-patterned silicon components and functional microstructures through crystallization and compositional tuning of silicon-germanium alloy films. These results open a route for the fabrication of high density, multi-functional integrated optoelectronic chips.
Highlights
Group IV semiconductor materials such as silicon (Si) and germanium (Ge) are excellent materials for integrated photonic devices as they are CMOS compatible, have high refractive indices, which allows for small device footprints, and they offer the potential for integration with electronics [1]
We show that it is possible to produce high quality poly-Si waveguides by laser processing pre-patterned amorphous Si (a-Si) components that have been deposited at temperatures < 400 oC [3]
We focus on the crystallization and compositional tuning of amorphous SiGe (a-SiGe) alloy films deposited at ~200 oC
Summary
Group IV semiconductor materials such as silicon (Si) and germanium (Ge) are excellent materials for integrated photonic devices as they are CMOS compatible, have high refractive indices, which allows for small device footprints, and they offer the potential for integration with electronics [1]. Most of the focus on these materials is on single-crystal platforms, owing to the superior optical and electronic properties over their amorphous and polycrystalline counterparts. More recently there has been increased interest in Group IV materials that can be deposited using cheap and flexible methods, followed by annealing to achieve high quality, i.e., close to single-crystal, polycrystalline components [2]. We show that it is possible to produce high quality poly-Si waveguides by laser processing pre-patterned amorphous Si (a-Si) components that have been deposited at temperatures < 400 oC [3]. We focus on the crystallization and compositional tuning of amorphous SiGe (a-SiGe) alloy films deposited at ~200 oC. The added advantage of composition tuning is critical as it allows for direct laser writing of graded index microstripes, which could be exploited for the production of optoelectronic circuits and components (e.g., waveguides, gratings, modulators) with tunable functionality [4]
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
