Laser-plasma extreme ultraviolet source at 6.7 nm using a rotating cryogenic Xe target

Abstract

A laser-plasma source comprising a rotating cryogenic solid-state Xe target has been studied for use in extreme ultraviolet lithography (EUVL) systems equipped with La/B4C mirrors. The laser-to-EUV power conversion efficiency (CE) of the cryogenic Xe target was improved to achieve a maximum CE of 0.15 % at 6.7 nm with 0.6 % bandwidth. We successfully demonstrated the continuous generation of EUV light with an average power of 80 mW at 6.7 nm with 0.6 % bandwidth using a Nd:YAG slab laser at a repetition rate of 320 Hz and an average power of 100 W. Scaling-up of the laser-plasma source for use as a future EUVL source is also discussed.