Abstract
Abstract2D metal/semiconducting heterostructures have attracted extensive attention for potential applications in future electronic and optoelectronic devices. However, the simple and fast preparation of patterned metal/semiconducting heterostructures with controllable channel lengths still faces challenges. Here, a simple and reliable laser patterning method for preparing patterned lateral/vertical 1T/2H VS2/MoS2 metal/semiconducting heterostructures is reported. Specifically, site‐selective etching of VS2 can be realized through the combination of laser radiation and acid solution etching. Further, pre‐patterned VS2 nanoplates with edge dangling bonds can offer effective nucleation points for the lateral epitaxial growth of MoS2, thus generating patterned VS2‐MoS2 lateral heterostructures. The laser processing method can further be used to create patterned VS2/MoS2 vertical van der Waals (vdWHs), which can only selectively etch the upper layer VS2 while maintaining the intrinsic structure of the bottom layer MoS2. The obtained patterned VS2/MoS2 vdWHs show a similar channel length of ≈420 nm, and the VS2 vdW contact MoS2 transistor is fabricated, delivering an On‐state current of 4.01 µA/µm, and carrier mobility of 3.56 cm2 s−1 V−1. This approach is also general for preparing patterned VSe2, VSe2/WSe2 heterostructures.
Published Version
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