Abstract

Indium-zinc-oxide (IZO) thin film transistors (TFT) have been fabricated on ITO/glass substrate with a laser scribing process at room temperature. Such transistors are composed of a bottom indium-tin-oxide (ITO) floating gate and multiples of in-plane control gates. The multiple input gates are not truly independent gates, capacitively coupling with the floating gate together, thus Neuron MOS (vMOS) operation is realized. The control gates, coupling with the floating gate, control the “on” and “off” of the neuron transistor. Robust AND logic is demonstrated on such neuron transistor.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.