Abstract
Tin oxide (SnO2) has emerged as promising applications in ultraviolet photodetectors (UV PDs) due to its prominent photoelectronic properties. However, the slow photoresponse of UV PDs based on SnO2 films limits the application. In this work, the absorbing intermediate layer-assisted femtosecond (fs) laser microprocessing technology is employed to engineer the SnO2 microwire arrays (MWAs) thin film. The obtained UV PDs based on SnO2 MWA films exhibit enhanced responsivity and ultrafast response in the UV region. Under light irradiation with a wavelength of 365 nm, the optimized responsivity and rising/decaying time reach 1.62 A/W and 0.89/2.3 ms with the bias voltage of 5 V. The results demonstrate that the SnO2 MWA film can serve as a high-performance photodetector in the UV region.
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